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FDD5680
July 2000
FDD5680
N-Channel, PowerTrench MOSFET
General Description
This N-Channel MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance.
Features * * *
38 A, 60 V. RDS(on) = 0.021 @ VGS = 10 V RDS(on) = 0.025 @ VGS = 6 V. Low gate charge (33nC typical). Fast switching speed. High performance trench technology for extremely low RDS(on).
Applications * *
DC/DC converter Motor drives
*
D
D G S
TO-252
S G
Absolute Maximum Ratings
Symbol
VDSS VGSS ID Drain-Source Voltage Gate-Source Voltage
TA=25 C unless otherwise noted
o
Parameter
Ratings
60 20
(Note 1) (Note 1a)
Units
V V A
Maximun Drain Current - Continuous Maximum Drain Current - Pulsed
38 8.5 100 60 2.8 1.3 -55 to +150
PD
Maximum Power Dissipation @ TC = 25oC TA = 25oC TA = 25oC
(Note 1) (Note 1a) (Note 1b)
W
TJ, Tstg
Operating and Storage Junction Temperature Range
C
Thermal Characteristics
RJC RJA Thermal Resistance, Junction-to- Case Thermal Resistance, Junction-to- Ambient
(Note 1) (Note 1b)
2.1 96
C/W C/W
Package Marking and Ordering Information
Device Marking FDD5680
2000 Fairchild Semiconductor International
Device FDD5680
Reel Size 13''
Tape width 16mm
Quantity 2500
FDD5680, Rev. C
FDD5680
Electrical Characteristics
Symbol
WDSS IAR BVDSS BVDSS TJ IDSS IGSSF IGSSR
TA = 25C unless otherwise noted
Parameter
Test Conditions
Min
Typ
Max Units
140 38 mJ A V
Off Characteristics
Single Pulse Drain-Source VDD = 30 V, ID = 38 A Avalanche Energy Maximum Drain-Source Avalanche Current Drain-Source Breakdown VGS = 0 V, ID = 250 A Voltage Breakdown Voltage ID = 250A, Referenced to 25C Temperature Coefficient Zero Gate Voltage Drain Current VDS = 48 V, VGS = 0 V Gate-Body Leakage Current, Forward Gate-Body Leakage Current, Reverse
(Note 2)
60 60 1 100 -100
mV/C A nA nA
VGS = 20V, VDS = 0 V VGS = -20 V, VDS = 0 V
On Characteristics
VGS(th) VGS(th) TJ RDS(on)
Gate Threshold Voltage Gate Threshold Voltage Temperature Coefficient Static Drain-Source On-Resistance On-State Drain Current Forward Transconductance
VDS = VGS, ID = 250 A ID = 250 A,Referenced to 25C VGS = 10 V, ID = 8.5 A VGS = 10 V, ID = 8.5 A,TJ=125C VGS = 6 V, ID = 7.5 A VGS = 10 V, VDS = 5 V VDS = 5 V, ID = 8.5 A
2
2.4 -6.4 0.017 0.028 0.019
4
V mV/C
0.021 0.042 0.025
ID(on) gFS
50 30
A S
Dynamic Characteristics
Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance
(Note 2)
VDS = 30 V, VGS = 0 V, f = 1.0 MHz
1835 210 90
pF pF pF
Switching Characteristics
td(on) tr td(off) tf Qg Qgs Qgd Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge
VDD = 30 V, ID = 1 A, VGS = 10 V, RGEN = 6
15 9 35 16
27 18 56 26 46
ns ns ns ns nC nC nC
VDS = 30 V, ID = 8.5 A, VGS = 10 V,
33 6.5 7.5
Drain-Source Diode Characteristics and Maximum Ratings
IS VSD Maximum Continuous Drain-Source Diode Forward Current Drain-Source Diode Forward Voltage VGS = 0 V, IS = 2.3 A
(Note 2)
2.3 0.75 1.2
A V
Notes: 1. RJA is the sum of the junction-to-case and case-to-ambient resistance where the case thermal reference is defined as the drain tab. RJC is guaranteed by design while RJA is determined by the user's board design.
a) RJA= 45oC/W when mounted on a 1in2 pad of 2oz copper.
b) RJA= 96oC/W when mounted on a 0.076 pad of 2oz copper.
Scale 1 : 1 on letter size paper 2. Pulse Test: Pulse Width 300 s, Duty Cycle 2.0%
FDD5680, Rev. C
FDD5680
Typical Characteristics
60 VGS = 10V 50 40 30
1.4 2.2
6.0V 5.0V 4.5V
2 VGS = 4.0V 1.8 1.6 4.5V 5.0V 6.0V 7.0V
20 10
4.0V
1.2 1
10V
3.5V 0 0 1 2 3 4
0.8 0 10 20 30 40 50 60
VDS, DRAIN-SOURCE VOLTAGE (V)
ID, DRAIN CURRENT (A)
Figure 1. On-Region Characteristics.
Figure 2. On-Resistance Variation with Drain Current and Gate Voltage.
0.05
2 1.8 1.6 1.4 1.2 1 0.8
ID = 8.5A VGS = 10V
0.04
ID = 4.3A
TA = 125 C
0.03
o
0.02
TA = 25 C
0.01
o
0.6 0.4 -50 -25 0 25 50 75 100
o
0
125
150
3
4
5
6
7
8
9
10
TJ, JUNCTION TEMPERATURE ( C)
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 3. On-Resistance Variation with Temperature.
Figure 4. On-Resistance Variation with Gate-to-Source Voltage.
60 VDS = 5V 50
o
100
TA = -55 C 125 C
o
VGS = 0V
25 C
o
10 TA = 125 C 1 25 C
o o
40 30 20 10 0 2 3 4 5 6
0.1 0.01 0.001 0.0001 0 0.2 0.4 0.6
-55 C
o
0.8
1
1.2
1.4
VGS, GATE TO SOURCE VOLTAGE (V)
VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 5. Transfer Characteristics.
Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature.
FDD5680, Rev. C
FDD5680
Typical Characteristics
(continued)
10 ID = 8.5A 8 VDS = 10V 30V 20V
2500 f = 1MHz VGS = 0 V 2000 CISS
6
1500
4
1000
2
500 COSS CRSS 0 10 20 30 40 50 60
0 0 5 10 15 20 25 30 35
0
Qg, GATE CHARGE (nC)
VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 7. Gate-Charge Characteristics.
Figure 8. Capacitance Characteristics.
100 RDS(ON) LIMIT 10 1S 1 DC 0.1 VGS = 10V SINGLE PULSE RJA = 96 C/W TA = 25 C 0.01 0.1 1 10 100
o o
60
100s 1ms 10ms
POWER (W)
SINGLE PULSE RJA = 96 C/W TA = 25 C 40
o o
100ms 10S
20
0 0.01 0.1 1 10 100 1000
VDS, DRAIN-SOURCE VOLTAGE (V)
SINGLE PULSE TIME (SEC)
Figure 9. Maximum Safe Operating Area.
Figure 10. Single Pulse Maximum Power Dissipation.
1 TRANSIENT THERMAL RESISTANCE
D = 0.5 0.2 r(t), NORMALIZED EFFECTIVE
0.1
0.1 0.05 0.01
R JA (t) = r(t) * R JA R JA = 96C/W
0.02 Single Pulse P(pk)
0.01
t1
t2
0.001
TJ - TA = P * R JA (t) Duty Cycle, D = t 1 / t 2
0.0001 0.0001
0.001
0.01
0.1 t , TIME (sec) 1
1
10
100
300
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1b. Transient themal response will change depending on the circuit board design.
FDD5680, Rev. C

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